C4-P-003302 APPLICATION OF FORE-VACUUM PLASMA ELECTRON SOURCE FOR SILICON-CARBON COATING DEPOSITION V.A. Burdovitsin1, I.Yu. Bakeev1, L.J. Ngon A Kiki1, E.M. Oks1,2 1Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia 2High Current Electronics Institute, Tomsk, Russia One of prospective methods of silicon-carbon coatings deposition is silicon carbide (SiC) electron beam evaporation. Compacted SiC powder is dielectric, which can accumulate charge at electron irradiation in high vacuum. This problem does not exist if fore-vacuum electron source is applied, because beam plasma provides charge runoff. signal Application of such electron source is illustrated by Fig. 1. Deposition rates are 1-10 μm/min and greater than in plasma-chemical methods. – + Ud 1 + 2.0x10-8 He –U + a 1.5x10-8 2 4 3 1.0x10-8 5 gas 5.0x10 Si+ C+ OH -9 Si2C+ SiOH+ SiC+ 10 Fig. 1. Experimental setup. 1source, 2-electron beam, SiC target, 4- substrate, 5- mass analyzer. SiC+2 + 20 30 40 50 60 m/z, a.e.m 70 80 90 100 Fig. 2. Mass-spectra of plasma. 1,0 2,0 2,4 40 Si C O 20 0,8 1,5 0,6 1,0 0,4 0,2 0,5 2,3 700 800 P, W 900 Fig. 3. Optical band gap vs beam power. 1000 0,0 0 700 800 P, W 900 1000 Fig. 4. Atomic content vs beam power. 0 5 H, GPa 10 Fig. 5. Hardness as function of elements ratio. Electron beam evaporation of silicon carbide in middle vacuum allows silicon carbon coatings deposition with rates more than in plasma-chemical ones and properties closed to them. C/Si, a.u. content, at. % Eg, eV 2,5 O/Si, a.u. 60 2,6
